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Bulletin I27097 rev. A 09/97
IRK.F102.. SERIES
FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR INT-A-paka Power Modules
Features
Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package UL E78996 approved
105 A
Description
These series of INT-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
I T(AV) @ TC I T(RMS) I TSM @ 50Hz @ 60Hz It
2
IRK.F102..
105 90 233 2850 3000 40.8 37.2 408 20 and 25 2 up to 1200 - 40 to 125
Units
A C A A A KA 2s KA 2s KA 2s s s V
o
@ 50Hz @ 60Hz
I 2t tq t rr VDRM / V RRM TJ range
C
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1
IRK.F102.. Series
Bulletin I27097 rev. A 09/97
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
08 IRK.F102.. Series 12
VRRM/VDRM, maximum repetitive peak reverse voltage V
800 1200
VRSM , maximum nonrepetitive peak rev. voltage V
800 1200
IRRM/I DRM max.
@ T J = 125C
mA
30
Current Carrying Capacity
ITM 180 el 50Hz 400Hz 2500Hz 5000Hz 10000Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 50 90 210 265 180 145 110 50 80% VDRM 50 60 90 340 415 280 230 175 50
o
Frequency f
ITM 180 el
o
ITM 100s
Units
320 395 320 260 190 50
500 625 490 380 275 50
1590 975 390 260 50
2210 1390 570 380 50
A A A A A V V
80% VDRM 60 90
80% VDRM 60
A/ s C
47 / 0.22 F
47 / 0.22 F
47 / 0.22 F
On-state Conduction
Parameter
IT(AV) IT(RMS) ITSM Maximum average on-state current @ Case temperature Maximum RMS current Maximum peak, one-cycle, non-repetitive surge current
IRK.F102..
105 90 233 2850 3000 2400 2500
Units Conditions
A C A A TC = 90C, as AC switch t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2 s t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = 125C 180 conduction, half sine wave
I2t
Maximum I2 t for fusing
40.8 37.2 28.8 26.3
I2 t
Maximum I2 t for fusing
408 1.12 1.28 2.43 2.00 1.97 600 1000
KA2s t = 0 to 10ms, no voltage reapplied V (16.7% x x I T(AV) < I < x I T(AV)), TJ = TJ max. (I > x IT(AV) ), TJ = TJ max. mW (16.7% x x I T(AV) < I < x I T(AV)), TJ = TJ max. (I > x I T(AV)), TJ = TJ max. V mA mA Ipk = 350A, TJ = TJ max., tp = 10ms sine pulse TJ = 25C, IT > 30 A TJ = 25C, VA = 12V, Ra = 6, Ig = 1A
VT(TO)1 Low level value of threshold voltage VT(TO)2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage drop Maximum holding current Typical latching current
2
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IRK.F102.. Series
Bulletin I27097 rev. A 09/97
Switching
Parameter
di/dt Maximum non-repetitive rate of rise
IRK.F102..
800
Units Conditions
A/s Gate drive 20V, 20, tr 1ms, VD= 80% VDRM T J = 25C ITM = 350A, di/dt = -25A/s, VR = 50V, TJ = 25C ITM = 350A, T J = 125C, di/dt = -25A/s, s VR = 50V, dv/dt = 400V/s linear to 80% V DRM
trr tq
Maximum recovery time Maximum turn-off time K 20
2 J 25
s
Blocking
Parameter
dv/dt Maximum critical rate of rise of off-state voltage VINS IRRM IDRM RMS isolation voltage Maximum peak reverse and off-state leakage current 3000 30 V mA 50 Hz, circuit to base, TJ = 25C, t = 1 s TJ = 125C, rated VDRM/VRRM applied
IRK.F102..
1000
Units Conditions
V/s TJ = 125C., exponential to = 67% VDRM
Triggering
Parameter
P GM P G(AV) IGM - VGM IGT V GT IGD V GD Maximum peak gate power Maximum peak average gate power Maximum peak positive gate current Maximum peak negative gate voltage Max. DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger
IRK.F102..
40 2 5 5 200 3 20 0.25
Units Conditions
W W A V mA V mA V TJ = 125C, rated VDRM applied TJ = 25C, Vak 12V, Ra = 6 f = 50 Hz, d% = 50 TJ = 125C, f = 50Hz, d% = 50 TJ = 125C, tp < 5ms
Thermal and Mechanical Specifications
Parameter
TJ T stg RthJC Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case RthC-hs Max. thermal resistance, case to heatsink T Mounting torque 10% IAP to heatsink busbar to IAP wt Approximate weight 4 - 6 (35 - 53) 4 - 6 (35 - 53) 500 (17.8) Nm 0.035 K/W Mounting surface flat and greased Per module
A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is (lb*in) not recommendd, busbars should be used and restrained during tightening. Threads must be g (oz) lubricated with a compound
IRK.F102..
- 40 to 125 - 40 to 150 0.25
Units Conditions
C
K/W
Per junction, DC operation
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3
IRK.F102.. Series
Bulletin I27097 rev. A 09/97
RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction
0.016 0.019 0.024 0.035 0.060 0.011 0.020 0.026 0.037 0.060
Units
K/W
Conditions
TJ = 125C
Ordering Information Table
Device Code
IRK
1 1 2 3 4 5 - Module type - Circuit configuration - Fast SCR
T
2
F
3
10
4
2
5
-
08
6
H
7
L
8
N
8
- Current rating: IT(AV) x 10 rounded - 1= 2= option with spacers and longer terminal screws option with standard terminal screws
6 7 8
- Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) - dv/dt code: H 400V/s - tq code: K 20s J 25s - None = Standard devices N = Aluminum nitrade substrate
9
NOTE: To order the Optional Hardware see Bulletin I27900
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IRK.F102.. Series
Bulletin I27097 rev. A 09/97
Outline Table
- All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0
For all types IRK...1 IRK...2
A 25 (0.98) 23 (0.91)
B ---30 (1.18)
C ---36 (1.42)
D 41 (1.61) ----
E 47 (1.85) ----
IRKTF..
IRKHF..
IRKLF..
IRKUF..
IRKVF..
IRKKF..
IRKNF..
IRK.F102.. Series R thJC (DC) = 0.17 K/W
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature (C)
130
130 IRK.F102.. Series R thJC (DC) = 0.17 K/W 120
120
110
Conduction Angle
110
Conduction Period
100 30 90 60 90 120 180 80 0 20 40 60 80 100 120 Average On-state Current (A)
100 30 90 60 90 120 180 80 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A) DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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5
IRK.F102.. Series
Bulletin I27097 rev. A 09/97
Max imum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 Average On-state Current (A)
Conduction Angle
280 240 200 160 120 80 40 0 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A) RMS Limit
Conduction Period
180 120 90 60 30 RMS Limit
DC 180 120 90 60 30
IRK.F102.. Series Per Junction T J= 125C
IRK.F102.. Series Per Junction T J = 125C
Fig. 3 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A) 3000 2800 2600 2400 2200 2000 1800 1600 IRK.F102.. Series Per Jun ction 0.1 Pulse Train Duration (s) 1
2600 2400 2200 2000 1800 1600 1400 1
At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated VRRMReapplied
IRK.F102.. Series Per Junction 10 100
1400 0.01
Number Of Equal Amplitude Half Cycle Curre nt Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
10000 Instantaneous On-state Current (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
1 Steady State Value R thJC 0.17 K/W = (DC Operation) 0.1
1000
T J= 25C 100 T = 125C
J
Transient Thermal Impedance Z thJ C(K/W)
0.01 IRK.F102.. Series Per Junction 0.001 0.001
IRK.F102.. Series Per Junction 10 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
0.01
0.1
1
10
100
Instantaneous On-state Voltage (V)
Square Wave Pulse Duration (s)
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristic
6
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IRK.F102.. Series
Bulletin I27097 rev. A 09/97
Maximum Reverse Recovery Charge - Qrr (C) 200 180 160 140 120
100 A
Maximum Reverse Recovery Current - Irr (A)
160 140 120 100 80 60 40 20 10
50 A
IRK.F102.. Series T J = 125C
I TM = 500 A 300 A 200 A
IRK.F102.. Series T J = 125 C
I TM = 500 A 300 A 200 A 100 A
100 80 60 40 20 10 20 30 40 50 60 70 80 90 100
50 A
20
30
40
50
60
70
80
90 100
Rate Of Fall Of On-state Current - di/dt (A/s)
Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 9 - Reverse Recovery Charge Characteristics
1E4
IRK.F102.. Series Sinusoidal Pulse T C = 90 C Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
Fig. 10 - Reverse Recovery Current Characteristics
Peak On-state Current (A)
tp
tp
IRK.F102.. Series Sinusoidal Pulse T C = 60 C
Snubber circuit R s = 47 ohms C s = 0.22 F V D= 80% V DRM
1E3
400 1000
50 Hz
150
2500 5000
1000
400
150
50 Hz
2500 5000
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 11 - Frequency Characteristics
1E4
IRK.F102.. Series Trapezoidal Pulse T C= 90C, di/dt 50A/s Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM IRK.F102.. Series Trapezoidal Pulse T C= 90C, di/dt 100A/s Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
Peak On-state Current (A)
tp
tp
1E3
400 1000
50 Hz 150 50 Hz 400 150 1000 2500 5000
2500
5000
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 12 - Frequency Characteristics
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7
IRK.F102.. Series
Bulletin I27097 rev. A 09/97
1E4
IRK.F102.. Series Trapezoidal Pulse T C = 60C, di/dt 50A/s Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
Peak On-state Current (A)
tp
tp
IRK.F102.. Series Trapezoidal Pulse T C = 60C, di/dt 100A/s
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
1E3
400 1000 2500 5000
150
50 Hz
150 400 1000 2500 5000
50 Hz
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
1E4
10 joules per pulse
Peak On-state Current (A)
5 2.5 1
10 joules per pulse 5 2.5 1 0.5 0.25 0.1 0.05
1E3
0.5 0.25 0.1 0.05
1E2
IRK.F102.. Series Sinusoidal pulse
tp
tp
IRK.F102.. Series Trapezoidal Pulse di/dt 50A/s
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100 Instantaneous Gate Voltage (V)
Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 20ohms tr<=1 s 10 (a) (b)
Tj=-40 C Tj=25 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W,
tp tp tp tp
= 20ms = 10ms = 5ms = 3.3ms
Tj=125 C
1
(1)
(2)
(3) (4)
VGD
IGD 0.1 0.01 0.1
IRK.F102.. Series 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
8
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